| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 1.6 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Continuous Collector Current | 0.2A |
| hFE Min | 3 |
| Input Power (Max) | 1.6 W |
| DC Current Gain (hFE) | 3 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | 150℃ (TJ) |
This NPN STN0214 general purpose bipolar junction transistor from STMicroelectronics is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1600 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 1200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
ST Microelectronics
7 Pages / 0.12 MByte
ST Microelectronics
3 Pages / 0.11 MByte
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