| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 30.0 A |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 460 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 4.15 nF |
| Gate Charge | 70.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 24 ns |
| Reverse recovery time | 200 ns |
| Input Capacitance (Ciss) | 4150pF @25V(Vds) |
| Input Power (Max) | 460 W |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 460W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 5.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH30N50P is a 500V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™) and reduced RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● Easy to mount
● Space-saving s
● High power density
IXYS Semiconductor
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Trans MOSFET N-CH 500V 30A 3Pin(3+Tab) TO-247AD
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IXYS Semiconductor
Trans MOSFET N-CH 500V 30A 3Pin(3+Tab) TO-247AD
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