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IXFH58N20Q
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IXFH58N20Q Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-247-3
Description:TO-247AD N-CH 200V 58A
Documentation:IXFH58N20Q Datasheet (2 Pages)Package Outline Dimension on2 Page
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IXFH58N20Q Datasheet PDF (2 Pages)
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IXFH58N20Q Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)200 V
Current Rating58.0 A
Case/PackageTO-247-3
Drain to Source Resistance (on) (Rds)40.0 mΩ
PolarityN-Channel
Power Dissipation300 W
Drain to Source Voltage (Vds)200 V
Continuous Drain Current (Ids)58.0 A
Rise Time40 ns
Input Capacitance (Ciss)3600pF @25V(Vds)
Fall Time13 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300W (Tc)
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IXFH58N20Q Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFH58N20Q Documents

IXFH58N20Q Datasheet
IXYS Semiconductor
2 Pages / 0.34 MByte
IXFH58N20Q Other Datasheet PDF
IXYS Semiconductor
2 Pages / 0.34 MByte

IXFH58N20 Documents

IXFH58N20 Datasheet PDF
IXYS Semiconductor
TO-247AD N-CH 200V 58A
IXFH58N20Q Datasheet PDF
IXYS Semiconductor
TO-247AD N-CH 200V 58A
IXFH58N20S Datasheet PDF
IXYS Semiconductor
Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
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