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IXFH80N10Q
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IXFH80N10Q Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-247-3
Description:TO-247AD N-CH 100V 80A
Documentation:IXFH80N10Q Datasheet (3 Pages)
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IXFH80N10Q Datasheet PDF (3 Pages)
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IXFH80N10Q Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Voltage Rating (DC)100 V
Current Rating80.0 A
Case/PackageTO-247-3
Drain to Source Resistance (on) (Rds)15.0 mΩ
PolarityN-Channel
Power Dissipation360 W
Drain to Source Voltage (Vds)100 V
Continuous Drain Current (Ids)80.0 A
Rise Time70.0 ns
Input Capacitance (Ciss)4500pF @25V(Vds)
Input Power (Max)360 W
Power Dissipation (Max)360W (Tc)
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IXFH80N10Q Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFH80N10Q Documents

IXFH80N10Q Datasheet
IXYS Semiconductor
3 Pages / 0.05 MByte
IXFH80N10Q Other Datasheet PDF
IXYS Semiconductor
2 Pages / 0.05 MByte

IXFH80N10 Documents

IXFH80N10 Datasheet PDF
IXYS Semiconductor
TO-247AD N-CH 100V 80A
IXFH80N10Q Datasheet PDF
IXYS Semiconductor
TO-247AD N-CH 100V 80A
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