| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-204 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.23 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 4200pF @25V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Material | Silicon |
N-Channel Enhancement Mode
●Features
●International standard packages
●Low RDS (on)HDMOS™ process
●Rugged polysilicon gate cell structure
●Low package inductance (< 5 nH)
●\- easy to drive and to protect
●Fast switching times
●Applications
●Switch-mode and resonant-mode power supplies
●Motor controls
●Uninterruptible Power Supplies (UPS)
●DC choppers
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
1 Pages / 0.12 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 24A 3Pin(2+Tab) TO-204AE
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