| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 24.0 A |
| Case/Package | TO-264-3 |
| Power Rating | 560 W |
| Drain to Source Resistance (on) (Rds) | 390 mΩ |
| Polarity | N-CH |
| Power Dissipation | 560 W |
| Drain to Source Voltage (Vds) | 1000 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 8700pF @25V(Vds) |
| Input Power (Max) | 560 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 560W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tube |
| Material | Silicon |
| Size-Height | 26.16 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation"s IXFK24N100 power MOSFET can provide a solution. Its maximum power dissipation is 560000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
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