| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 64.0 A |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.085 Ω |
| Polarity | N-Channel |
| Power Dissipation | 830 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 8.70 nF |
| Gate Charge | 150 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 64.0 A |
| Input Capacitance (Ciss) | 8700pF @25V(Vds) |
| Input Power (Max) | 830 W |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 830W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFK64N50P is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● Low Qg
● Low package inductance
● Easy to mount
● Space saving
● Avalanche rating
IXYS Semiconductor
4 Pages / 0.22 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 64A 3Pin(3+Tab) TO-264
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