| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 130 A |
| Case/Package | SOT-227-4 |
| Power Rating | 700 W |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.022 Ω |
| Polarity | N-Channel |
| Power Dissipation | 700 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 130 A |
| Rise Time | 75 ns |
| Input Capacitance (Ciss) | 14500pF @25V(Vds) |
| Fall Time | 31 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 700W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Weight | 0.000036 kg |
| Operating Temperature | -55℃ ~ 150℃ |
The IXFN130N30 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● MiniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped inductive switching (UIS) rating
● Low package inductance
● Easy to mount
● Space saving
IXYS Semiconductor
4 Pages / 0.15 MByte
IXYS Semiconductor
4 Pages / 0.15 MByte
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