| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 900 V |
| Current Rating | 26.0 A |
| Case/Package | SOT-227-4 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 300 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 26.0 A |
| Rise Time | 35 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 10800pF @25V(Vds) |
| Input Power (Max) | 600 W |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Weight | 44.0 g |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Increase the current or voltage in your circuit with this IXFN26N90 power MOSFET from Ixys Corporation. Its maximum power dissipation is 600000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
4 Pages / 0.13 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
