| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 52 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 40 ns |
| Input Power (Max) | 52 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 52000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.7 mm |
| Size-Width | 5.7 mm |
| Size-Height | 26.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STGFW20V60DF IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 52000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.
ST Microelectronics
15 Pages / 1.43 MByte
ST Microelectronics
16 Pages / 0.53 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 52000mW 3Pin(3+Tab) TO-3pF Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 52000mW 3Pin(3+Tab) TO-3pF Tube
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