| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 5.00 A |
| Case/Package | SOIC-8 |
| Power Rating | 1.6 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 30 mΩ |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 2.7 V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 460pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STS5DNF20V is a dual N-channel STripFET™ II Power MOSFET for switching applications. This Power MOSFET has been developed using STMicroelectronics" unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
● Standard outline for easy automated surface-mount assembly
● Ultra low threshold gate drive
ST Microelectronics
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ST Microelectronics
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ST Microelectronics
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ST Microelectronics
STMICROELECTRONICS STS5DNF20V Dual MOSFET, Dual N Channel, 2.5A, 20V, 30mohm, 4.5V, 2.7V
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