| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 36.0 A |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.24 Ω |
| Polarity | N-Channel |
| Power Dissipation | 700 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 1 kV |
| Continuous Drain Current (Ids) | 36.0 A |
| Rise Time | 55 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 9200pF @25V(Vds) |
| Input Power (Max) | 700 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Weight | 46.0 g |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the IXFN36N100 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 700000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
4 Pages / 0.14 MByte
Littelfuse
Trans MOSFET N-CH Si 1KV 36A 4-Pin SOT-227B
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