| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 48.0 A |
| Case/Package | SOT-227-4 |
| Power Rating | 520 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 520 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 48.0 A |
| Rise Time | 60.0 ns |
| Input Capacitance (Ciss) | 8400pF @25V(Vds) |
| Input Power (Max) | 520 W |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 520W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN48N50 is a 500V N-channel Power MOSFET with fast intrinsic diode (HIPERFET™). The most popular power MOSFET is for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. It is suitable for use with DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, temperature and lighting controls.
● Molding epoxies meet UL94V-0 flammability classification
● SOT-227B miniBLOC with aluminum nitride isolation
● Low RDS (on) HDMOSTM process
● Unclamped Inductive Switching (UIS) rated
● Fast intrinsic rectifier
● Easy to mount
● Space savings
● High power density
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