| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 55.0 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 6700pF @25V(Vds) |
| Fall Time | 9.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN55N50F is a N-channel Power MOSFET offers low package inductance hence easy to drive and to protect. It is designed for use with DC-to-DC converters, SMPS/RMPS, DC choppers, pulse generation and laser driver applications.
● RF capable MOSFET
● Enhancement-mode
● Double metal process for low gate resistance
● Rugged polysilicon gate cell structure
● Unclamped inductive switching rated
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 55A 4Pin SOT-227B
Littelfuse
Trans MOSFET N-CH Si 500V 55A 4-Pin SOT-227B
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
