| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 60.0 A |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.075 Ω |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 60.0 A |
| Rise Time | 52 ns |
| Isolation Voltage | 2.5 kV |
| Input Capacitance (Ciss) | 15000pF @25V(Vds) |
| Input Power (Max) | 700 W |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 700W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Width | 25.42 mm |
| Weight | 0.04 kg |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN60N60 is a HiPerFET™ N-channel enhancement-mode Single Die MOSFET features avalanche rated and fast intrinsic rectifier.
● International standard package
● miniBLOC with aluminium nitride isolation
● Low RDS (ON) HDMOS™ process
● Unclamped inductive switching (UIS) rated
● Rugged polysilicon gate cell structure
● Low package inductance
● Easy to mount
● Space savings
● High power density
● High dV/dt and low trr
IXYS Semiconductor
2 Pages / 0.06 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
Power MOSFET, N Channel, 60A, 800V, 140mohm, 10V, 5V
IXYS Semiconductor
Power MOSFET, N Channel, 60A, 600V, 75mohm, 10V, 4.5V
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