| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 64.0 A |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.096 Ω |
| Polarity | N-Channel |
| Power Dissipation | 700 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 1.15 nF |
| Gate Charge | 200 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 12000pF @25V(Vds) |
| Input Power (Max) | 700 W |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN64N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● miniBLOC with aluminium nitride isolation
● UL94V-0 Flammability rating
● Unclamped inductive switching (UIS) rated
● Rugged polysilicon gate cell structure
● Low package inductance
● Easy to mount
● Space savings
● High power density
● Low RDS (ON) HDMOS™ process
IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN64N60P Power MOSFET, N Channel, 64A, 600V, 96mohm, 10V, 5V
Littelfuse
Trans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B
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