| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 54.0 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 347000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 347 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 347000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The APT25GT120BRDQ2G IGBT transistor from Microsemi is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 347000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
Microsemi
9 Pages / 0.15 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
9 Pages / 0.25 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 1200V 54A 347000mW 3Pin(3+Tab) TO-247
Microchip
IGBT 1200V 54A 347W TO247
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