| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.74 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 1.61 nF |
| Gate Charge | 32.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 27 ns |
| Reverse recovery time | 200 ns |
| Input Capacitance (Ciss) | 1610pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFP10N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● Unclamped inductive switching (UIS) rated
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFP10N60P Power MOSFET, N Channel, 10A, 600V, 740mohm, 10V, 5.5V
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