| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.026 Ω |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 82.0 A |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 14800pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFR140N30P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
● Silicon chip on direct-copper-bond substrate - High power dissipation and isolated mounting surface
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
● 2500V Electrical isolation voltage
IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
Single N-Channel 300V 300W 185NC Through Hole Power Mosfet - ISOPLUS247
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