| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Power Dissipation | 1390 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 250 V |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 28000pF @25V(Vds) |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1390W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 5.21 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
GigaMOS Power MOSFET
●N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
●Features
●International Standard Packages
●High Current Handling Capability
●Fast Intrinsic Diode
●Avalanche Rated
●Low RDS(on)
●Applications
●DC-DC Converters
●Battery Chargers
●Switched-Mode and Resonant-Mode Power Supplies
●DC Choppers
●AC Motor Drives
●Uninterruptible Power Supplies
●High Speed Power Switching Applications
IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
N-Channel 250V 180A 12.9mΩ Through Hole GigaMOS Power Mosfet - PLUS247
Littelfuse
Power Field-Effect Transistor,
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