IXFX200N10P Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Category:	MOSFETs
Case Package:	TO-247-3
Description:	Single N-Channel 100V 830W 235NC Through Hole Power Mosfet - TO-264
Documentation:	IXFX200N10P Datasheet (5 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IXFX200N10P Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	7.5 mΩ
Power Dissipation	830 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Rise Time	35 ns
Input Capacitance (Ciss)	7600pF @25V(Vds)
Input Power (Max)	830 W
Fall Time	90 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	830W (Tc)