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IXFX26N100P
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IXFX26N100P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-247-3
Description:PLUS N-CH 1000V 20A
Documentation:IXFX26N100P Datasheet (4 Pages)
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IXFX26N100P Datasheet PDF (4 Pages)
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IXFX26N100P Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Case/PackageTO-247-3
Number of Channels1 Channel
PolarityN-CH
Power Dissipation780W (Tc)
Drain to Source Voltage (Vds)1000 V
Continuous Drain Current (Ids)20A
Input Capacitance (Ciss)11900pF @25V(Vds)
Power Dissipation (Max)780W (Tc)
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IXFX26N100P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Width5.21 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFX26N100P Documents

IXFX26N100P Datasheet
IXYS Semiconductor
4 Pages / 0.11 MByte
IXFX26N100P Other Datasheet PDF
IXYS Semiconductor
4 Pages / 0.11 MByte

IXFX26N100 Documents

IXFX26N100P Datasheet PDF
IXYS Semiconductor
PLUS N-CH 1000V 20A
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