| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.57 Ω |
| Polarity | N-Channel |
| Power Dissipation | 780 W |
| Threshold Voltage | 6.5 V |
| Drain to Source Voltage (Vds) | 1.2 kV |
| Breakdown Voltage (Drain to Source) | 1200 V |
| Rise Time | 45 ns |
| Input Capacitance (Ciss) | 11100pF @25V(Vds) |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 780W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.34 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFX20N120P is a HiPerFET™ N-channel enhancement-mode Polar™ Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● Unclamped inductive switching (UIS) rated
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
Power MOSFET, HiPerFET, N Channel, 20A, 1.2kV, 750mohm, 10V, 4.5V
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFX20N120P Power MOSFET, N Channel, 20A, 1.2kV, 0.57Ω, 10V, 6.5V
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