| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 500 W |
| Drain to Source Voltage (Vds) | 500 V |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 7000pF @25V(Vds) |
| Input Power (Max) | 500 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
As an alternative to traditional transistors, the IXFX48N50Q power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 500000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
IXYS Semiconductor
4 Pages / 0.56 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 48A 3Pin(3+Tab) PLUS 247
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