| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Dissipation | 180 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 180 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 180000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Design |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
●VCES= 1200V
●IC110 = 20A
●VCE(sat) ≤2.5V
●Features
●Optimized for Low Conduction Losses
●International Standard Packages
●Advantages
●High Power Density
●Low Gate Drive Requirement
●Applications
●Power Inverters
●UPS
●Motor Drives
●SMPS
●PFC Circuits
●Battery Chargers
●Welding Machines
●Lamp Ballasts
●Inrush Current Protection Circuits
IXYS Semiconductor
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IXYS Semiconductor
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