| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 480000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 100 ns |
| Input Power (Max) | 480 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 480000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this IXYH40N120B3D1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 480000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with xpt technology.
IXYS Semiconductor
7 Pages / 0.18 MByte
IXYS Semiconductor
7 Pages / 0.17 MByte
IXYS Semiconductor
IGBT 1200V 96A Extreme Light Punch Through IGBT - TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 86A 480000mW 3Pin(3+Tab) TO-247AD
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
