| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 190000 mW |
| Breakdown Voltage (Collector to Emitter) | 1700 V |
| Reverse recovery time | 230 ns |
| Input Power (Max) | 190 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use the IXGH16N170AH1 IGBT transistor from Ixys Corporation as an electronic switch. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 190000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
IXYS Semiconductor
7 Pages / 0.2 MByte
IXYS Semiconductor
8 Pages / 0.31 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 32A 190000mW 3Pin(3+Tab) TO-247AD
Littelfuse
Trans IGBT Chip N-CH 1700V 32A 190000mW 3-Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 16A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 16A 190000mW 3Pin(3+Tab) TO-247
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