TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 190000 mW |
Breakdown Voltage (Collector to Emitter) | 1700 V |
Input Power (Max) | 190 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 190000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure IXGH16N170A IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 190000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
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