| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 48.0 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 150000 mW |
| Rise Time | 25.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 150 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Features
●• International standard packages JEDEC TO-247 and surface mountable TO-268
●• High frequency IGBT
●• High current handling capability
●• Latest generation HDMOSTM process
●• MOS Gate turn-on
● - drive simplicity
●Applications
●• PFC circuits
●• Uninterruptible power supplies (UPS)
●• Switched-mode and resonant-mode power supplies
●• AC motor speed control
●• DC servo and robot drives
●• DC choppers
●Advantages
●• High power density
●• Very fast switching speeds for high frequency applications
IXYS Semiconductor
2 Pages / 0.05 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TRANS IGBT CHIP N-CH 600V 48A 3Pin(3+TAB) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
HiPerFAST IGBT with Diode
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