| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 150000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 50 ns |
| Input Power (Max) | 150 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 48A 150W Through Hole TO-247AD (IXGH)
IXYS Semiconductor
6 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TRANS IGBT CHIP N-CH 600V 48A 3Pin(3+TAB) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
HiPerFAST IGBT with Diode
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
