| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 190 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 190 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT PT 600V 56A 190W Through Hole TO-247AD (IXGH)
IXYS Semiconductor
2 Pages / 0.09 MByte
IXYS Semiconductor
2 Pages / 0.13 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TRANS IGBT CHIP N-CH 600V 48A 3Pin(3+TAB) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
HiPerFAST IGBT with Diode
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