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IXGH25N100A
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IXGH25N100A Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1000V 50A 200000mW 3Pin(3+Tab) TO-247AD
Documentation:IXGH25N100A Datasheet (4 Pages)
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IXGH25N100A Datasheet PDF (4 Pages)
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IXGH25N100A Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)1.00 kV
Current Rating50.0 A
Case/PackageTO-247-3
Power Dissipation200000 mW
Rise Time200 ns
Breakdown Voltage (Collector to Emitter)1000 V
Input Power (Max)200 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)200000 mW
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IXGH25N100A Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingBulk
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGH25N100A Documents

IXGH25N100A Datasheet
IXYS Semiconductor
4 Pages / 0.1 MByte
IXGH25N100A Other Datasheet PDF
IXYS Semiconductor
7 Pages / 0.23 MByte

IXGH25N100 Documents

IXGH25N100 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1kV 50A 3Pin(3+Tab) TO-247AD
IXGH25N100A Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1000V 50A 200000mW 3Pin(3+Tab) TO-247AD
IXGH25N100AU1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1000V 50A 200000mW 3Pin
IXGH25N100U1 Datasheet PDF
IXYS Semiconductor
IGBT 1000V 50A 200W TO247AD
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