| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 735 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 1 kV |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 8200pF @25V(Vds) |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 735W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tube |
| Weight | 10.0 mg |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFK30N100Q2 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
● Double metal process for low gate resistance
● International standard package
● UL94V-0 Flammability rating
● Avalanche energy and current rated
● High dV/dt, low intrinsic Rg, low Qg and low trr
● Easy to mount
● Space savings
● High power density
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