| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 70 ns |
| Input Power (Max) | 250 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
High speed PT IGBTs for 10-50kHz Switching
●V
●CES
●= 1200V
●I
●C100
●= 24A
●V
●CE(sat) ≤
●4.2V
●t
●fi(typ)
●= 42ns
●Features
●Optimized for Low Conduction and Switching Losses
●Square RBSOA
●Anti-Parallel Ultra Fast Diode
●Avalanche Rated
●International Standard Package
●Applications
●AC Motor Speed Control
●DC Servo and Robot Drives
●DC Choppers
●Uninterruptible Power Supplies (UPS)
●Switch-Mode and Resonant-Mode Power Supplies
IXYS Semiconductor
6 Pages / 0.17 MByte
IXYS Semiconductor
14 Pages / 0.8 MByte
IXYS Semiconductor
IGBT 1200V 48A 250W TO247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 48A 250000mW 3Pin(3+Tab) TO-247AD
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