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IXGH32N120A3
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IXGH32N120A3 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1200V 75A 300000mW 3Pin(3+Tab) TO-247AD
Documentation:IXGH32N120A3 Datasheet (6 Pages)
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IXGH32N120A3 Datasheet PDF (6 Pages)
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IXGH32N120A3 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation300000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)300 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300000 mW
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IXGH32N120A3 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Width5.3 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGH32N120A3 Documents

IXGH32N120A3 Datasheet
IXYS Semiconductor
6 Pages / 0.19 MByte

IXGH32N120 Documents

IXGH32N120A3 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 75A 300000mW 3Pin(3+Tab) TO-247AD
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