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IXGH32N90B2D1
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IXGH32N90B2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 900V 64A 300000mW 3Pin(3+Tab) TO-247AD
Documentation:IXGH32N90B2D1 Datasheet (8 Pages)
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IXGH32N90B2D1 Datasheet PDF (8 Pages)
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IXGH32N90B2D1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation300000 mW
Breakdown Voltage (Collector to Emitter)900 V
Reverse recovery time190 ns
Input Power (Max)300 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300000 mW
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IXGH32N90B2D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGH32N90B2D1 Documents

IXGH32N90B2D1 Datasheet
IXYS Semiconductor
8 Pages / 0.31 MByte
IXGH32N90B2D1 Other Datasheet PDF
IXYS Semiconductor
7 Pages / 0.21 MByte

IXGH32N90B2 Documents

IXGH32N90B2 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 900V 64A 300000mW 3Pin(3+Tab) TO-247
IXGH32N90B2D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 900V 64A 300000mW 3Pin(3+Tab) TO-247AD
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