| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 600 V |
| Current Rating | 60.0 A |
| Case/Package | TO-247-3 |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 50 ns |
| Input Power (Max) | 200 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
HiPerFAST IGBT with Diode Combi Pack
●Features
●International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD
● High frequency IGBT and antiparallel FRED in one package
●High current handling capability
●2nd generation HDMOSTM process
●MOS Gate turn-on
● - drive simplicity
●Applications
●AC motor speed control
●DC servo and robot drives
●DC choppers
●Uninterruptible power supplies (UPS)
●Switched-mode and resonant-mode power supplies
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Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
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Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
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IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD
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IGBT 600V 60A 200W TO247AD
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IXYS Semiconductor
HiPerFAST IGBT with Diode Combi Pack
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