| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 60.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 200 W |
| Power Dissipation | 200000 mW |
| Rise Time | 20.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 60A 200W Through Hole TO-247AD (IXGH)
IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 60A 200W TO247AD
IXYS Semiconductor
IGBT 600V 60A 200W TO247AD
IXYS Semiconductor
HiPerFAST IGBT with Diode Combi Pack
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
