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IXGH40N120B2D1

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IXGH40N120B2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Category:	IGBTs
Case Package:	TO-247-3
Description:	Trans IGBT Chip N-CH 1200V 75A 380000mW 3Pin(3+Tab) TO-247
Documentation:	IXGH40N120B2D1 Datasheet (7 Pages)Package Outline Dimension on2 Page 4 Page 6 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

IXGH40N120B2D1 Datasheet PDF (7 Pages)

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IXGH40N120B2D1 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	380 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	100 ns
Input Power (Max)	380 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	380000 mW

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IXGH40N120B2D1 Size & Package

TYPE	DESCRIPTION
Product Lifecycle Status	Active
Packaging	Tube
Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)

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IXGH40N120B2D1 Environmental

IXGH40N120B2D1 Function Overview

IXGH40N120B2D1 Documents

IXGH40N120B2D1 Datasheet

IXYS Semiconductor

7 Pages / 0.21 MByte

IXGH40N120B2 Documents

IXGH40N120B2D1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1200V 75A 380000mW 3Pin(3+Tab) TO-247

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