| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Polarity | P-CH |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 36A |
| Rise Time | 31 ns |
| Input Capacitance (Ciss) | 3100pF @25V(Vds) |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common gate amplifier using this IXTA36P15P power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
6 Pages / 0.17 MByte
IXYS Semiconductor
6 Pages / 0.17 MByte
IXYS Semiconductor
P-Channel 150V 36A 110 mO Surface Mount PolarP Power Mosfet - TO-263
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