TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 300 W |
Breakdown Voltage (Collector to Emitter) | 600 V |
Input Power (Max) | 300 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Design |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
You can use this IXGH48N60C3C1 IGBT transistor from Ixys Corporation as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 300000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
IXYS Semiconductor
7 Pages / 0.17 MByte
IXYS Semiconductor
7 Pages / 0.17 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 300000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 300000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 300000mW 3Pin(3+Tab) TO-247AD
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