TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Breakdown Voltage (Collector to Emitter) | 600 V |
Input Power (Max) | 400 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
B2-Class High Speed IGBTs
●Features
●High frequency IGBT
●High current handling capability
●MOS Gate turn-on
●\- drive simplicity
IXYS Semiconductor
5 Pages / 0.57 MByte
IXYS Semiconductor
7 Pages / 0.17 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 300000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 400000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.