| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Power Dissipation | 420000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Capacitance (Cies) | 6.6nF @25V |
| Input Power (Max) | 420 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 420000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT Module Single 600V 160A 420W Chassis Mount SOT-227B
IXYS Semiconductor
6 Pages / 0.57 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 160A 420000mW 4Pin SOT-227B
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