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IXGK50N60C2D1
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IXGK50N60C2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-264-3
Description:Trans IGBT Chip N-CH 600V 75A 480000mW 3Pin(3+Tab) TO-264AA
Documentation:IXGK50N60C2D1 Datasheet (7 Pages)
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IXGK50N60C2D1 Datasheet PDF (7 Pages)
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IXGK50N60C2D1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-264-3
Power Dissipation480000 mW
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time35 ns
Input Power (Max)480 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)480000 mW
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IXGK50N60C2D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
Size-Length19.96 mm
Size-Width5.13 mm
Size-Height26.16 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGK50N60C2D1 Documents

IXGK50N60C2D1 Datasheet
IXYS Semiconductor
7 Pages / 0.21 MByte
IXGK50N60C2D1 Other Datasheet PDF
IXYS Semiconductor
7 Pages / 0.32 MByte

IXGK50N60C2 Documents

IXGK50N60C2D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 480000mW 3Pin(3+Tab) TO-264AA
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