IXGN200N170 Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Case Package:	SOT-227-4
Description:	IGBT
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IXGN200N170 Specifications

TYPE	DESCRIPTION
Case/Package	SOT-227-4
Breakdown Voltage (Collector to Emitter)	1700 V
Reverse recovery time	133 ns
Input Power (Max)	1250 W

TYPE	DESCRIPTION
Product Lifecycle Status	Active
Operating Temperature	-55℃ ~ 150℃ (TJ)

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