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IXGN200N60B
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IXGN200N60B Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:SOT-227-4
Description:Trans IGBT Chip N-CH 600V 200A 600000mW 4Pin SOT-227B
Documentation:IXGN200N60B Datasheet (6 Pages)
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IXGN200N60B Datasheet PDF (6 Pages)
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IXGN200N60B Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins4 Pin
Case/PackageSOT-227-4
Power Dissipation600000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Capacitance (Cies)11nF @25V
Input Power (Max)600 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)600000 mW
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IXGN200N60B Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Width25.42 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGN200N60B Documents

IXGN200N60B Datasheet
IXYS Semiconductor
6 Pages / 0.54 MByte
IXGN200N60B Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGN200N60 Documents

IXGN200N60 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 200A 4Pin SOT-227B
IXGN200N60B3 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 300A 830000mW 4Pin SOT-227B
IXGN200N60A2 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 200A 700000mW 4Pin SOT-227B
IXGN200N60B Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 200A 600000mW 4Pin SOT-227B
IXGN200N60A Datasheet PDF
IXYS Semiconductor
IGBT 300A 600V SOT-227B
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