TYPE | DESCRIPTION |
---|
Mounting Style | Screw |
Number of Pins | 4 Pin |
Case/Package | SOT-227-4 |
Power Dissipation | 360000 mW |
Breakdown Voltage (Collector to Emitter) | 600 V |
Input Capacitance (Cies) | 4.78nF @25V |
Input Power (Max) | 360 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 360000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXGN72N60C3H1 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 360000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
7 Pages / 0.21 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 78A 360000mW 4Pin SOT-227B
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.