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IXGN82N120C3H1
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IXGN82N120C3H1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:SOT-227-4
Description:Trans IGBT Module N-CH 1200V 130A 595000mW 4Pin SOT-227B
Documentation:IXGN82N120C3H1 Datasheet (3 Pages)
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IXGN82N120C3H1 Datasheet PDF (3 Pages)
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IXGN82N120C3H1 Specifications

TYPEDESCRIPTION
Number of Pins4 Pin
Case/PackageSOT-227-4
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)7.9nF @25V
Input Power (Max)595 W
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IXGN82N120C3H1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusEnd of Life
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGN82N120C3H1 Documents

IXGN82N120C3H1 Datasheet
IXYS Semiconductor
3 Pages / 0.09 MByte
IXGN82N120C3H1 Other Datasheet PDF
IXYS Semiconductor
3 Pages / 0.19 MByte

IXGN82N120C3 Documents

IXGN82N120C3H1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Module N-CH 1200V 130A 595000mW 4Pin SOT-227B
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