| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-227-4 |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Input Power (Max) | 600 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
IGBT Module PT Single 650V 170A 600W Chassis Mount SOT-227B
IXYS Semiconductor
6 Pages / 0.2 MByte
IXYS Semiconductor
Igbt Xpt 650V 166A Sot-227B
IXYS Semiconductor
Igbt Xpt 650V 166A Sot-227B
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