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IXGP16N60C2D1
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IXGP16N60C2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-220-3
Description:Trans IGBT Chip N-CH 600V 40A 150000mW 3Pin(3+Tab) TO-220
Documentation:IXGP16N60C2D1 Datasheet (7 Pages)
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IXGP16N60C2D1 Datasheet PDF (7 Pages)
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IXGP16N60C2D1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
Power Dissipation150000 mW
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time30 ns
Input Power (Max)150 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)150000 mW
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IXGP16N60C2D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGP16N60C2D1 Documents

IXGP16N60C2D1 Datasheet
IXYS Semiconductor
7 Pages / 0.21 MByte
IXGP16N60C2D1 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGP16N60C2 Documents

IXGP16N60C2 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-220
IXGP16N60C2D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 150000mW 3Pin(3+Tab) TO-220
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